供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-05-23
Lifecycle StatusProduction (Last Updated: 5 months ago)
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描述
由其分销商提供的 STMicroelectronics STL60N10F7 的描述。
N-channel 100 V, 0.013 Ohm typ., 12 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package
STL60N10F7 N-CHANNEL MOSFET TRANSISTOR, 60 A, 100 V, 8-PIN POWERFLAT
Power MOSFET, N Channel, 100 V, 46 A, 0.0145 ohm, PowerFLAT, Surface Mount
MOSFET, N-CH, 100V, 46A, 175DEG C, 72W; Transistor Polarity: N Channel; Continuous Drain Current Id: 46A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0145ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 72W; Transistor Case Style: PowerFLAT; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: STripFET DeepGATE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)46 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance18 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.64 nF
Max Operating Temperature175 °C
Max Power Dissipation72 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Rds On Max16.5 mΩ
Resistance18 mΩ
Rise Time16.8 ns
Schedule B8541290080
Turn-Off Delay Time24 ns
Turn-On Delay Time15.2 ns
Dimensions
Height950 µm
Length5.4 mm
Width6.35 mm