供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-11-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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描述
由其分销商提供的 STMicroelectronics STGY80H65DFB 的描述。
Trans IGBT Chip N-CH 650V 120A 469000mW 3-Pin(3+Tab) Max247 Tube
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel
IGBT TRENCH FS 650V 120A MAX247
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)650 V
Element ConfigurationSingle
Max Collector Current120 A
Max Operating Temperature175 °C
Max Power Dissipation469 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time85 ns