供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-05-13
Lifecycle StatusProduction (Last Updated: 7 months ago)
LTB Date2018-06-29
LTD Date2018-12-29
相关零件
onsemiFGH75T65UPD-F085
Trans IGBT Chip N-CH 650V 150A 375000mW Automotive 3-Pin(3+Tab) TO-247 Tube
LittelfuseIXXH40N65B4
Trench Series - 650V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs, TO-247, RoHS
LittelfuseIXXH40N65B4H1
Trench Series - 650V - 1200V XPT™ (eXtreme-light Punch Through) IGBTs, TO-247, RoHS
描述
由其分销商提供的 STMicroelectronics STGWA80H65DFB 的描述。
Trench gate field-stop IGBT, HB series 650 V, 80 A high speed
Trans IGBT Chip N-CH 650V 120A 470000mW 3-Pin(3+Tab) TO-247 Tube
IGBT 650V 80A 1,8V TO247 long D
TO-247 IGBT Transistors / Modules ROHS
Igbt |Stmicroelectronics STGWA80H65DFB
TRANSISTOR, IGBT, 650V, 120A, TO-247;
470W 1.6V 650V 120A TO-247 15.8mm*5mm*21mm
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)650 V
Element ConfigurationSingle
Max Collector Current120 A
Max Operating Temperature175 °C
Max Power Dissipation470 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time85 ns