供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2015-05-04
Lifecycle StatusProduction (Last Updated: 8 months ago)
相关零件
描述
由其分销商提供的 STMicroelectronics STGWA30M65DF2 的描述。
Trans IGBT Chip N-CH 650V 60A 258000mW 3-Pin(3+Tab) TO-247 Tube
Trench gate field-stop IGBT M series, 650 V 30 A low loss
STMICROELECTRONICS STGWA30M65DF2 IGBT Single Transistor, 60 A, 1.55 V, 258 W, 650 V, TO-247, 3 Pins
STGWA30M65DF Series Advanced Trench Gate Field Stop Through Hole IGBT - TO-247-2
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
258W 1.55V 650V 60A TO-247 Through hole mounting 15.8mm*5mm*21mm
258W 60A 650V Trench Field Stop TO-247 IGBTs ROHS
IGBT, SINGLE, 650V, 60A, TO-247-3; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 258W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pi
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)650 V
Element ConfigurationSingle
Max Collector Current60 A
Max Operating Temperature175 °C
Max Power Dissipation258 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time140 ns