价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | STGW30M65DF2 | 343 | 343 | |||||||||
| Arrow Electronics | STGW30M65DF2 | 330 | 330 | |||||||||
| DigiKey | 497-16485-5-ND | 598 | 1 | Tube | ||||||||
| TME | STGW30M65DF2 | 0 | 1 | 19h | ||||||||
| Avnet | STGW30M65DF2 | 0 | 600 | 6d |
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IGBT W/ULTRAFAST SOFT RECOVERY D / IGBT 650 V 60 A 250 W Through Hole TO-247AD
描述
由其分销商提供的 STMicroelectronics STGW30M65DF2 的描述。
Trench gate field-stop IGBT M series, 650 V 30 A low loss
SRWG Series 650 V 60 A 258 W Through Hole IGBT Trench Field Stop - TO-247-3
TRANSISTOR, IGBT, 650V, 60A, TO-247; Available until stocks are exhausted
Trans IGBT Chip N-CH 650V 60A 258W 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
IGBT 650V 30A 1,55V TO247-3 RoHSconf
TO-247-3 IGBT Transistors / Modules ROHS
Short-circuit rugged IGBT, TO-247, Tube
STMicroelectronics SCT
晶体管, 晶体管, IGBT, 650V, 60A, TO-247;
TRENCH GATE FIELD-STOP IGBT M SE
258W 1.55V 650V 60A TO-247-3 15.8mm*5mm*21mm
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Technical
Collector Base Breakdown Voltage (VCES)650 V
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)650 V
Forward Current30 A
Forward Voltage1.85 V
Max Collector Current60 A
Max Operating Temperature175 °C
Max Power Dissipation258 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time140 ns