供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-06-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
onsemiFGH40N60SMD
Trans IGBT Chip N-CH 600V 80A 349000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 600V 80A 349W TO-247-3
描述
由其分销商提供的 STMicroelectronics STGW60V60F 的描述。
Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
Trans IGBT Chip N-CH 600V 80A 375W 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247
IGBT Transistors 600V 60A Trench Gate 1.8V Vce IGBT
IGBT Trench gate,600V 60A/100 deg,TO247
RS APAC
Short-circuit rugged IGBT, TO-247, Tube
STMicroelectronics SCT
晶体管, IGBT, 600V, 80A, 175度 C, 375W;
IGBT TRENCH FS 600V 80A TO-247-3
IGBT, 600V, 80A, 175DEG C, 375W;
TO247 IGBT 60A 600V TRENCH GAT
STGW60V60F, 60 A 600 V, 1MHZ, 3-PIN TO-247
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Breakdown Voltage (VCES)600 V
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.3 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Max Collector Current80 A
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation375 W
Turn-Off Delay Time208 ns
Turn-On Delay Time60 ns
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm