供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-07-05
Lifecycle StatusObsolete (Last Updated: 6 months ago)
相关零件
onsemiFGH75T65SHDTL4
IGBT 650V 150A 455W TO-247 / Trans IGBT Chip N-CH 650V 150A 455000mW 4-Pin(4+Tab) TO-247 Tube
InfineonIKW75N65EH5XKSA1
650V DuoPack IGBT and full-rated diode High speed series fifth generation
描述
由其分销商提供的 STMicroelectronics STGW60H65F 的描述。
Trans IGBT Chip N-CH 600V 120A 360000mW 3-Pin(3+Tab) TO-247 Tube
60 A, 650 V field stop trench gate IGBT
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel, TO-247
IGBT Transistors 60A 650V FST IGBT Very High Switching
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Terminals3
Weight6.500007 g
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage1.9 V
Collector Emitter Voltage (VCEO)650 V
Element ConfigurationSingle
Max Collector Current120 A
Max Operating Temperature150 °C
Max Power Dissipation360 W
Min Operating Temperature-55 °C
Number of Elements1
Schedule B8541290080
Turn-Off Delay Time210 ns
Turn-On Delay Time65 ns