供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-07-26
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2020-10-11
LTD Date2021-04-11
相关零件
onsemiFGH75T65SHDTL4
IGBT 650V 150A 455W TO-247 / Trans IGBT Chip N-CH 650V 150A 455000mW 4-Pin(4+Tab) TO-247 Tube
描述
由其分销商提供的 STMicroelectronics STGW60H65DF 的描述。
60 A, 650 V field stop trench gate IGBT with very fast diode
STGW60H65DF Series 650 V 120 A Field Stop Trench Gate IGBT - TO-247
Trans IGBT Chip N-CH 350V 120A 360000mW 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 120A I(C), 650V V(BR)CES, N-Channel, TO-247
IC REG CTRLR PHOTOV 1OUT 28TSSOP
STMICROELECTRONICS STGW60H65DF IGBTS
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247
MountThrough Hole
Number of Terminals3
Weight6.500007 g
Technical
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2.1 V
Collector Emitter Voltage (VCEO)650 V
Element ConfigurationSingle
Max Collector Current120 A
Max Operating Temperature150 °C
Max Power Dissipation360 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time62 ns
Schedule B8541290080
Turn-Off Delay Time165 ns
Turn-On Delay Time67 ns