供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-04-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2022-10-29
LTD Date2023-04-29
相关零件
InfineonIRGP4640PBF
Tube Through Hole ROHS3Compliant IGBT Transistor 1.9V @ 15V 24A 65A 250W 40ns/105ns
RenesasRJH60F5DPQ-A0#T0
IGBT 600V 80A 260.4W TO247A / IGBT Trench 600 V 80 A 260.4 W Through Hole TO-247A
STMicroelectronicsSTGW40H65FB
IGBT 650V 80A 283W TO247 / IGBT Trench Field Stop 650 V 80 A 283 W Through Hole TO-247-3
描述
由其分销商提供的 STMicroelectronics STGW60H60DLFB 的描述。
Trench gate field-stop IGBT, HB series 600 V, 60 A high speed
IGBT, 600V, 80A, 175DEG C, 375W; Available until stocks are exhausted Alternative available
Trans IGBT Chip N-CH 600V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
Igbt, 600V, 80A, 175Deg C, 375W Rohs Compliant: Yes |Stmicroelectronics STGW60H60DLFB
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Collector Base Breakdown Voltage (VCES)600 V
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Forward Current60 A
Forward Voltage1.8 V
Max Collector Current80 A
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Operating Temperature-55 °C
Number of Elements1
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm