描述
由其分销商提供的 STMicroelectronics STGW40H65FB 的描述。
IGBT 650V 80A 283W TO247 / IGBT Trench Field Stop 650 V 80 A 283 W Through Hole TO-247-3
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
Trans IGBT Chip N-CH 650V 80A 283W 3-Pin(3+Tab) TO-247 Tube
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
IGBT Transistors 650V 40A Trench Gate Field-Stop IGBT
STGW40H65FB, IGBT TRANSISTOR, 80 A 650 V, 3-PIN TO-247
Short-circuit rugged IGBT, TO-247, Tube
STMicroelectronics SCT
TO-247 IGBT Transistors / Modules ROHS
IGBT N-Ch 650V 40A High-Speed TO247
TO247 IGBT 40A 650V TRENCH GAT
ST MICROELECTRONICS STGW40H65FB
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Base Breakdown Voltage (VCES)650 V
Collector Emitter Breakdown Voltage650 V
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)650 V
Element ConfigurationSingle
Max Collector Current80 A
Max Operating Temperature175 °C
Max Power Dissipation283 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation283 W
Schedule B8541290080
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm