STMicroelectronics STGW35NB60SD

Name: STMicroelectronics STGW35NB60SD
Brand: STMicroelectronics
SKU: STGW35NB60SD

Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247 Tube

$ 3.53

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor	SKU		Min	Pkg
Farnell	STGW35NB60SD	0	600					3.609*	3.609*	1d
Mouser	511-STGW35NB60SD	462	1	Tube	6.410	4.910	3.970	3.530	3.120
Win Source	WS-STGW35NB60SD	1,200	9			6.491	4.327	4.327	4.327	3h
Worldway Electronics	STGW35NB60SD	12,163	7	Tube		1.438	1.394	1.320	1.320	2h
Utmel Electronic	2381-STGW35NB60SD	30		Tube	5.155	4.864	4.588	4.084	4.084	12h

数据表和文档

下载 STMicroelectronics STGW35NB60SD 的数据表和制造商文档。

STMicroelectronics

Datasheet13 页20 年前

TME

Farnell

库存历史记录

3 个月趋势:

+0.00%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-11-21

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2022-09-11

LTD Date2023-03-11

描述

由其分销商提供的 STMicroelectronics STGW35NB60SD 的描述。

Trans IGBT Chip N-CH 600V 70A 200000mW 3-Pin(3+Tab) TO-247 Tube

Verical

STGW35 Series 600 V 70 A Through Hole N-Channel Silicon IGBT - TO-247-3

Future Electronics

STGW35NB60SD, IGBT Transistor, 75 A 600 V, 1MHz, 3-Pin TO-247

RS (Formerly Allied Electronics)

Insulated Gate Bipolar Transistor, 70A I(C), 600V V(BR)CES, N-Channel, TO-247AA

IHS

STMICROELECTRONICS STGW35NB60SD IGBT Single Transistor, 70 A, 1.7 V, 200 W, 600 V, TO-247, 3 Pins

Jak Electronics

N-CHANNEL 35A - 600V - TO-247 Low Drop PowerMESH TM IGBT

Win Source

Igbt |Stmicroelectronics STGW35NB60SD

Newark

70 A 600 V N-CHANNEL IGBT TO-247AA

Component Stockers USA

N-CHANNEL 35A - 600V IGBTTO 247<AZ

Jameco

IGBT, TO-247; Transistor Type:IGBT; DC Collector Current:70A; Collector Emitter Voltage Vces:1.7V; Power Dissipation Pd:200W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:70A; Package / Case:TO-247; Power Dissipation Max:200W; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulsed Current Icm:250A; Rise Time:70ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V

element14 APAC