STMicroelectronics STGW30H65FB

Name: STMicroelectronics STGW30H65FB
Brand: STMicroelectronics
SKU: STGW30H65FB

IGBT 650V 30A 260W TO-247 / Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube

$ 1.455

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Newark		STGW30H65FB	889	1		4.830	3.090	2.820	2.680	2.680
Verical		STGW30H65FB	4,200	600					1.300	1.300
Arrow Electronics		STGW30H65FB	4,200	600					1.300	1.300
TME	2	STGW30H65FB	36	1		4.744*	2.979*	2.755*	2.755*	2.755*	17h
DigiKey		497-14467-5-ND	144	1	Tube	4.450	4.450	2.457	1.694	1.448

数据表和文档

下载 STMicroelectronics STGW30H65FB 的数据表和制造商文档。

IHS

Datasheet18 页5 年前

Newark

Future Electronics

库存历史记录

3 个月趋势:

-5.10%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2014-03-10

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STGW30H65FB 的描述。

IGBT 650V 30A 260W TO-247 / Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube

Win Source

Trench gate field-stop IGBT, HB series 650 V, 30 A high speed

STMicroelectronics

TRENCH GATE FIELD-STOP 650V 30A HIGH SPEED IGBT Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247

ComSIT Distribution GmbH

IGBT, SINGLE, 650V, 60A, TO-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:260W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

Newark