onsemi FGH20N6S2
Obsolete
数据表和文档
下载 onsemi FGH20N6S2 的数据表和制造商文档。
官方数据表9 年前
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-03-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-01-03
LTD Date2008-07-03
描述
由其分销商提供的 onsemi FGH20N6S2 的描述。
Tube Through Hole N-CHANNEL SINGLE IGBT Transistor 2.7V @ 15V 7A 28A 125W 7.7ns/87ns
600V, SMPS II Series N-Channel IGBT | IGBT 600V 28A 125W TO247
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247
IGBTs Sgl, N-Ch 600V
N-CHANNEL IGBT
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.2 V
Collector Emitter Voltage (VCEO)600 V
Current Rating28 A
Element ConfigurationSingle
Fall Time105 ns
Max Collector Current28 A
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation125 W
Rise Time4.5 ns
Voltage Rating (DC)600 V
数据表和文档
下载 onsemi FGH20N6S2 的数据表和制造商文档。
官方数据表9 年前