供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-09-18
Lifecycle StatusProduction (Last Updated: 1 month ago)
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600 V IGBT with anti-parallel diode in TO-220 Full-Pak package, PG-TO220-3, RoHS
描述
由其分销商提供的 STMicroelectronics STGP19NC60SD 的描述。
STGP19NC60SD Series 600 V 40 A Very Fast IGBT Flange Mount - TO-220
Trans IGBT Chip N-CH 600V 40A 125W 3-Pin(3+Tab) TO-220AB Tube
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-220AB
20 A, 600 V fast IGBT with Ultrafast diode
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Collector Base Breakdown Voltage (VCES)600 V
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.9 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Forward Current20 A
Forward Voltage2.3 V
Max Collector Current40 A
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Operating Temperature-55 °C
Number of Elements1
Reverse Recovery Time31 ns
Turn-Off Delay Time175 ns
Turn-On Delay Time17.5 ns