备用零件
Price @ 1000
$ 1.1
$ 3.44
Stock
236,728
147,405
Authorized Distributors
6
1
Mount
-
Through Hole
Case/Package
-
TO-220-3
Collector Emitter Breakdown Voltage
-
600 V
Max Collector Current
60 A
60 A
Power Dissipation
-
37 W
Collector Emitter Saturation Voltage
2 V
2.4 V
Reverse Recovery Time
-
110 ns
描述
由其分销商提供的 STMicroelectronics STGF30M65DF2 的描述。
38W 60A 650V FS(Field Stop) TO-220FP-3 IGBT Transistors / Modules ROHS
Trench gate field-stop IGBT M series, 650 V 30 A low loss
Trans IGBT Chip N-CH 650V 60A 38mW 3-Pin(3+Tab) TO-220FP Tube
STGF30M65DF2: 650 V 60 A 38 W Trench Gate Field-Stop M Series IGBT - TO-220-3
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-220AB
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Number of Terminals3
Technical
Collector Emitter Saturation Voltage2 V
Collector Emitter Voltage (VCEO)650 V
Max Collector Current60 A
Max Operating Temperature175 °C
Max Power Dissipation38 W
Min Operating Temperature-55 °C
Number of Elements1