STMicroelectronics STGF30M65DF2

Name: STMicroelectronics STGF30M65DF2
Brand: STMicroelectronics
SKU: STGF30M65DF2

38W 60A 650V FS(Field Stop) TO-220FP-3 IGBT Transistors / Modules ROHS

$ 1.039

Production

制造商页面数据表

价格与库存

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未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Newark		STGF30M65DF2	525	1		3.500	2.680	1.860	1.710	1.630
TME	2	STGF30M65DF2	74	1		2.560	1.860	1.290	1.220	1.220	4h
DigiKey		497-19151-ND	794	1	Tube	3.140	3.140	1.404	1.048	0.899
Avnet		STGF30M65DF2	0	1K					0.911	0.872	7h
Future Electronics		STGF30M65DF2	0	1K	Tube				0.985	0.940

数据表和文档

下载 STMicroelectronics STGF30M65DF2 的数据表和制造商文档。

STMicroelectronics

Datasheet18 页10 年前

Newark

库存历史记录

3 个月趋势:

+59.87%

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STMicroelectronicsSTGF30M65DF2

STMicroelectronicsSTGF30H60DF

Price @ 1000

$ 1.039

$ 3.44

Stock

167,431

108,724

Authorized Distributors

6

2

Mount

-

Through Hole

Case/Package

-

TO-220-3

Collector Emitter Breakdown Voltage

-

600 V

Max Collector Current

60 A

Power Dissipation

-

37 W

Collector Emitter Saturation Voltage

2 V

2.4 V

Reverse Recovery Time

-

110 ns

供应链

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STGF30M65DF2 的描述。

38W 60A 650V FS(Field Stop) TO-220FP-3 IGBT Transistors / Modules ROHS

EBEE

Trench gate field-stop IGBT M series, 650 V 30 A low loss

STMicroelectronics

Trans IGBT Chip N-CH 650V 60A 38mW 3-Pin(3+Tab) TO-220FP Tube

Verical

STGF30M65DF2: 650 V 60 A 38 W Trench Gate Field-Stop M Series IGBT - TO-220-3

Future Electronics

Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-220AB

IHS

IGBT, SINGLE, 650V, 60A, TO-220FP; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:38W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes

Newark