STMicroelectronics STGD3HF60HDT4

STGD3HF60HD Series 600 V 4.5 A, Very Fast IGBT with Ultrafast Diode - TO-252
$ 0.458
Production
制造商页面数据表

价格与库存

查看所有价格优惠
DistributorSKUMinPkg
NewarkSTGD3HF60HDT41,7851Cut Tape
DigiKey
2
497-10960-1-ND2,1051Cut Tape
TME
2
STGD3HF60HDT42,4981
2h
AvnetSTGD3HF60HDT402500
2d
Future ElectronicsSTGD3HF60HDT402500Tape & Reel

数据表和文档

下载 STMicroelectronics STGD3HF60HDT4 的数据表和制造商文档。

IHS

Datasheet26 页9 年前

Factory Futures

Future Electronics

库存历史记录

3 个月趋势:
-71.20%
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供应链

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-06-30
Lifecycle StatusProduction (Last Updated: 4 months ago)

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描述

由其分销商提供的 STMicroelectronics STGD3HF60HDT4 的描述。

STGD3HF60HD Series 600 V 4.5 A, Very Fast IGBT with Ultrafast Diode - TO-252
Future Electronics
Trans IGBT Chip N-CH 600V 7.5A 38W 3-Pin(2+Tab) DPAK T/R
Verical
Insulated Gate Bipolar Transistor, 13A I(C), 600V V(BR)CES, N-Channel, TO-252
Semicontronic
IGBT Transistors 4.5 A 600V IGBT 20V VGE 25A IFSM
Digi-ic_SMART PIONEER
IGBT, 600V, 30A, TO-247, STMicroelectronics
ComSIT Distribution GmbH
38W 7.5A 600V TO-252 IGBTs ROHS
Dasenic
IGBT, W DIODE, 600V, 7.5A, 38W, DPAK; Transistor Type:IGBT; DC Collector Current:7.5A; Collector Emitter Voltage Vces:600V; Power Dissipation Pd:38W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Pd:38W
Farnell

图片

Augswan
element14 APAC
Future Electronics
Lanka Micro
TME

制造商别名

STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics