价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 497-5109-1-ND | 71 | 1 | Cut Tape | ||||||||
| Future Electronics | STGB14NC60KDT4 | 0 | 1K | Tape & Reel | ||||||||
| Avnet | STGB14NC60KDT4 | 0 | 2K | 2d | ||||||||
| Arrow Electronics | STGB14NC60KDT4 | 0 | 2K | |||||||||
| element14 APAC | STGB14NC60KDT4 | 0 | 1 | 7h |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-07-07
Lifecycle StatusProduction (Last Updated: 4 months ago)
相关零件
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STMicroelectronicsSTGB10NC60HDT4
STGB10NC60HD Series 600 V 20 A Surface Mount Very fast IGBT - D2PAK-3
描述
由其分销商提供的 STMicroelectronics STGB14NC60KDT4 的描述。
Trans IGBT Chip N-CH 600V 25A 80000mW 3-Pin(2+Tab) D2PAK T/R
14 A, 600 V short-circuit rugged IGBT
IGBT 600V 25A 80W D2PAK / N-CHANNEL 14A - 600V - TO-220/TO-220FP/D2PAK SHORT CIRCUIT RATED PowerMESH IGBT
Short-circuit rugged IGBT, D2PAK, Tape and Reel
STMicroelectronics SCT
Insulated Gate Bipolar Transistor, 25A I(C), 600V V(BR)CES, N-Channel, TO-263AB
IGBT, N-Channel 600V 25A, D2PAK
80W 2.1V 600V 25A D2PAK 10.4mm*9.35mm*4.6mm
Igbt |Stmicroelectronics STGB14NC60KDT4
IGBT Transistors PowerMESH" IGBT
IC GATE DRVR HALF-BRIDGE 8SOIC
IGBT, SMD, 600V, 14A, D2-PAK; DC Collector Current: 25A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 80W; Collector Emitter Voltage V(br)ceo: -; Transistor Case Style: TO-263; No. of Pins: 3Pins;
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Base Breakdown Voltage (VCES)600 V
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.85 V
Collector Emitter Voltage (VCEO)600 V
Current Rating25 A
Element ConfigurationSingle
Forward Current10 A
Forward Voltage1.8 V
Max Breakdown Voltage600 V
Max Collector Current25 A
Max Operating Temperature150 °C
Max Power Dissipation80 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation80 W
Reverse Recovery Time37 ns
Rise Time8.5 ns
Schedule B8541290080
Voltage Rating (DC)600 V
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm