STMicroelectronics STGB10NC60KDT4

Name: STMicroelectronics STGB10NC60KDT4
Brand: STMicroelectronics
SKU: STGB10NC60KDT4

Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(2+Tab) D2PAK T/R / IGBT 600V 20A 65W D2PAK

$ 0.709

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Arrow Electronics		STGB10NC60KDT4	2,984	1		0.782	0.770	0.746	0.709	0.709
Verical		STGB10NC60KDT4	2,984	9			0.770	0.746	0.709	0.709
TME	2	STGB10NC60KDT4	991	1		2.288*	1.592*	1.179*	1.179*	1.179*	3h
DigiKey	3	497-5736-1-ND	1,964	1	Cut Tape	2.110	1.346	0.909	0.722	0.722
RS (Formerly Allied Electronics)		STGB10NC60KDT4	0	5	Bulk		2.040	1.840	1.840	1.840	7h

数据表和文档

下载 STMicroelectronics STGB10NC60KDT4 的数据表和制造商文档。

element14 APAC

Datasheet20 页20 年前

Newark

Nu Horizons

Farnell

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

+68.32%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2005-07-25

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STGB10NC60KDT4 的描述。

Trans IGBT Chip N-CH 600V 20A 60000mW 3-Pin(2+Tab) D2PAK T/R / IGBT 600V 20A 65W D2PAK

Win Source

Igbt Single Transistor, 10 A, 2.5 V, 60 W, 600 V, To-263, 3 |Stmicroelectronics STGB10NC60KDT4

Newark

STGB10NC60KDT4, IGBT TRANSISTOR, 20 A 600 V, 1MHZ, 3-PIN D2PAK

RS (Formerly Allied Electronics)

N-CHANNEL 600V-10A-D2PAK SHORT CIRCUIT RATED POWERMESH IGBT Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel

ComSIT Distribution GmbH

IGBT, SMD, 600V, 10A, D2-PAK; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 60W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Ic Continuous a Max: 20A; Fall Time tf: 82ns; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Max: 60W; Pulsed Current Icm: 30A; Rise Time: 6ns; Termination Type: Surface Mount Device; Transistor Polarity: N Channel; Transistor Type: IGBT; Voltage Vces: 600V

Farnell