价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 497-14975-1-ND | 4,135 | 1 | Cut Tape | ||||||||
| Verical | STGB10H60DF | 2,000 | 1K | |||||||||
| Arrow Electronics | STGB10H60DF | 2,000 | 1K | |||||||||
| TME | STGB10H60DF | 0 | 1 | 12h | ||||||||
| Avnet | STGB10H60DF | 0 | 2K | 1d |
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描述
由其分销商提供的 STMicroelectronics STGB10H60DF 的描述。
Trench gate field-stop IGBT, H series 600 V, 10 A high speed
Trans IGBT Chip N-CH 600V 20A 115W 3-Pin(2+Tab) D2PAK T/R
STGB10H60DF, IGBT TRANSISTOR, 20 A 600 V, 3-PIN D2PAK
Short-circuit rugged IGBT, D2PAK, Tape and Reel
STMicroelectronics SCT
Insulated Gate Bipolar Transistor, 20A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Igbt |Stmicroelectronics STGB10H60DF
IGBT Transistors PTD IGBT & IPM
115W 1.5V 600V 20A TO-263 10.4mm*9.35mm*4.6mm
IGBT TRENCH FS 600V 20A TO-263
IC PWR SWITCH N-CHAN 1:1 8MSOP
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight2.000002 g
Technical
Collector Base Breakdown Voltage (VCES)600 V
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.95 V
Collector Emitter Voltage (VCEO)600 V
Element ConfigurationSingle
Forward Current10 A
Forward Voltage1.7 V
Max Breakdown Voltage600 V
Max Collector Current20 A
Max Operating Temperature175 °C
Max Power Dissipation115 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Reverse Recovery Time107 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm