备用零件
Price @ 1000
$ 1.206
$ 1.603
Stock
509,975
1,636,090
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-220-3
TO-220-3
Drain to Source Voltage (Vdss)
600 V
600 V
Continuous Drain Current (ID)
18 A
17 A
Threshold Voltage
-
3 V
Rds On Max
190 mΩ
190 mΩ
Gate to Source Voltage (Vgs)
25 V
30 V
Power Dissipation
30 W
30 W
Input Capacitance
1.06 nF
1.4 nF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-01-14
Lifecycle StatusProduction (Last Updated: 5 months ago)
相关零件
STMicroelectronicsSTF24NM60N
N-channel 600 V, 0.168 Ohm, 17 A MDmesh(TM) II Power MOSFET TO-220FP
onsemiFCPF190N60E
N-Channel Power MOSFET, SUPERFET® II, Easy Drive, 600 V, 20.6 A, 190 mΩ, TO-220F
描述
由其分销商提供的 STMicroelectronics STF24N60M2 的描述。
N-channel 600 V, 0.168 Ohm typ., 18 A MDmesh M2 Power MOSFET in TO-220FP package
STF24N60M2 N-CHANNEL MOSFET TRANSISTOR, 18 A, 650 V, 3-PIN TO-220FP
N-Channel 600 V 190 mO Flange Mount MDMesh II Plus Mosfet - TO-220FP
Trans MOSFET N-CH 600V 18A 3-Pin(3+Tab) TO-220FP Tube
Power Field-Effect Transistor, 18A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N-CH, 600V, 18A, 30W, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.168ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time61 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.06 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation30 W
Rds On Max190 mΩ
Rise Time9 ns
Schedule B8541290080
Turn-Off Delay Time60 ns
Turn-On Delay Time14 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm