STMicroelectronics STF10NM60N

Name: STMicroelectronics STF10NM60N
Brand: STMicroelectronics
SKU: STF10NM60N

N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in TO-220FP package

$ 1.47

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Distributor		SKU		Min
Avnet	2	94T3368	8	1	3.040	2.150	1.980	1.510	1.510	3h
Newark		STF10NM60N	8	1	2.960	2.140	1.940	1.470	1.470
Arrow Electronics		STF10NM60N	2,000	1K				0.702	0.661
Verical		STF10NM60N	2,000	1K				0.701	0.590
TME	2	STF10NM60N	160	1	3.990*	2.707*	1.942*	1.766*	1.766*	14h

数据表和文档

下载 STMicroelectronics STF10NM60N 的数据表和制造商文档。

Farnell

Datasheet28 页13 年前

Newark

element14 APAC

Future Electronics

iiiC

库存历史记录

3 个月趋势:

+106%

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STMicroelectronicsSTF10NM60N

STMicroelectronicsSTF10NM60ND

Price @ 1000

$ 1.47

$ 1.141

Stock

723,843

147,550

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

8 A

Threshold Voltage

3 V

4 V

Rds On Max

550 mΩ

Gate to Source Voltage (Vgs)

25 V

Power Dissipation

25 W

Input Capacitance

540 pF

供应链

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STF10NM60N 的描述。

N-channel 600 V, 0.53 Ohm typ., 10 A, MDmesh II Power MOSFET in TO-220FP package

STMicroelectronics

Power MOSFET, N Channel, 600 V, 10 A, 550 Milliohms, TO-220FP, 3 Pins, Through Hole

Avnet

Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220FP Tube

Verical

Power Field-Effect Transistor, 8A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N CH, 600V, 8A, TO 220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.53ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:25W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C

Farnell