价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | STF10N62K3 | 0 | 1 | 18h | ||||||||
| Avnet | STF10N62K3 | 0 | 1K | 7h | ||||||||
| Farnell | STF10N62K3 | 0 | 1 | 1d | ||||||||
| Mouser | 511-STF10N62K3 | 976 | 1 | Tube | ||||||||
| Win Source | WS-STF10N62K3 | 8,617 | 55 | 6h |
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描述
由其分销商提供的 STMicroelectronics STF10N62K3 的描述。
N-channel 620 V, 0.68 Ohm typ., 8.4 A SuperMESH3(TM) Power MOSFET in TO-220FP package
STMICROELECTRONICS STF10N62K3 Power MOSFET, N Channel, 8.4 A, 620 V, 0.68 ohm, 10 V, 3.75 V
Trans MOSFET N-CH 620V 8.4A 3-Pin(3+Tab) TO-220FP Tube
30W(Tc) 30V 4.5V@ 100¦ÌA 42nC@ 10 V 1N 620V 750m¦¸@ 4A,10V 8.4A 1.25nF@50V TO-220FP 20mm
620 V, 8.4 A, 0.68 OHM, TO-220FP, SUPERMESH3 N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 8.4A I(D), 620V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 620V, 8.4A, TO 220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:8.4A; Drain Source Voltage Vds:620V; On Resistance Rds(on):0.68ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:30W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)8.4 A
Drain to Source Breakdown Voltage620 V
Drain to Source Resistance750 mΩ
Drain to Source Voltage (Vdss)620 V
Fall Time31 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.25 nF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage620 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation30 W
Rds On Max750 mΩ
Rise Time15 ns
Threshold Voltage3.75 V
Turn-Off Delay Time41 ns
Turn-On Delay Time14.5 ns
Dimensions
Height16.4 mm
Length10.4 mm
Width4.6 mm