onsemi FQPF9N50C

Name: onsemi FQPF9N50C
Brand: onsemi
SKU: FQPF9N50C

Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, TO-220F

$ 0.921

EOL

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Distributor		SKU		Min	Pkg
Verical	6	FQPF9N50C	119,000	271					1.152	1.027
Onlinecomponents.com		FQPF9N50C	95	1	Bulk	3.550	3.400	1.130	0.677	0.677
Rochester Electronics		FQPF9N50C	404,493					1.110	0.921	0.821	16h
Flip Electronics		FQPF9N50C	46,000								6d
element14 APAC		FQPF9N50C	0	1		2.325*	1.836*	1.560*	1.143*	1.087*	4h

数据表和文档

下载 onsemi FQPF9N50C 的数据表和制造商文档。

IHS

Datasheet8 页12 年前

Datasheet0 页0 年前

onsemi

Fairchild Semiconductor

Farnell

iiiC

库存历史记录

3 个月趋势:

+0.00%

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备用零件

此零件

备用零件

onsemiFQPF9N50C

onsemiIRFS840B

Price @ 1000

$ 0.921

$ 0.409

Stock

1,705,871

16,181

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

Drain to Source Voltage (Vdss)

500 V

Continuous Drain Current (ID)

9 A

8 A

Threshold Voltage

4 V

Rds On Max

800 mΩ

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

44 W

Input Capacitance

1.03 nF

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-06-18

Lifecycle StatusEOL (Last Updated: 3 days ago)

LTB Date2022-12-30

LTD Date2023-06-30

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FQPF9N50C 的描述。

Power MOSFET, N-Channel, QFET®, 500 V, 9 A, 800 mΩ, TO-220F

onsemi

Trans MOSFET N-CH 500V 9A 3-Pin(3+Tab) TO-220FP Rail

Verical

Power Field-Effect Transistor, 9A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, 500V, 9A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.8ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissi

element14 APAC

These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for highefficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Fairchild Semiconductor

MOSFET, N, TO-220F; Transistor Polarity:N; Max Current Id:5.3A; Max Voltage Vds:500V; On State Resistance:0.73ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:30V; Power Dissipation:50W; Operating Temperature Range:-55ºC to +150ºC; Transistor Case Style:TO-220F; No. of Pins:3; SVHC 2:Cobalt dichloride; Case Style:TO-220F; Cont Current Id:5.3A; Power Dissipation Pd:50W; Pulse Current Idm:21A; Termination Type:Through Hole; Transistor Type:MOSFET; Typ Voltage Vds:500V; Typ Voltage Vgs th:5V; Voltage Vgs Rds on Measurement:10V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)

Farnell