STMicroelectronics STD6NF10T4

Name: STMicroelectronics STD6NF10T4
Brand: STMicroelectronics
SKU: STD6NF10T4

N-channel 100V - 0.22 Ohm - 6A Dpak Low Gate Charge Stripfet Mosfet

$ 0.499

Obsolete

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Distributor		SKU		Min	Pkg
TME	2	STD6NF10T4	0	1		0.630	0.552	0.462	0.397	0.366	21h
RS (Formerly Allied Electronics)		STD6NF10T4	0	5	Bulk		0.660	0.600	0.600	0.600	16h
element14 APAC	2	STD6NF10T4	0	1	Cut Tape	1.841*	1.169*	0.776*	0.559*	0.547*	13h
Farnell	2	STD6NF10T4	0	1	Cut Tape	1.376*	1.065*	0.768*	0.499*	0.475*	1d
Win Source		WS-345172	72,632	55				0.982	0.655	0.655	1d

数据表和文档

下载 STMicroelectronics STD6NF10T4 的数据表和制造商文档。

Newark

Datasheet14 页20 年前

TME

Arrow Electronics

Nu Horizons

iiiC

库存历史记录

3 个月趋势:

-100%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1980-01-04

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2024-07-27

LTD Date2025-01-27

描述

由其分销商提供的 STMicroelectronics STD6NF10T4 的描述。

N-CHANNEL 100V - 0.22 OHM - 6A DPAK LOW GATE CHARGE STripFET MOSFET

STMicroelectronics

STD6NF10T4 N-CHANNEL MOSFET TRANSISTOR, 6 A, 100 V, 3-PIN TO-252

RS (Formerly Allied Electronics)

Power Field-Effect Transistor, 6A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

IHS

MOSFET, N CH, 100V, 6A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 3A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 30W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 6A; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +175°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 100V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

Farnell

Mosfet, N Channel, 100V, 6A, Dpak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:3A; Tensión Drenaje-Fuente Vds:100V; Resistencia De Activación Rds(On):220Mohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STD6NF10T4

Newark