onsemi IRLR120ATF
$ 0.728
Obsolete
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-03-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2011-03-02
LTD Date2011-09-02
相关零件
STMicroelectronicsSTD10NF10T4
N-channel 100 V, 0.115 Ohm typ., 13 A low gate charge STripFET II Power MOSFET in DPAK package
描述
由其分销商提供的 onsemi IRLR120ATF 的描述。
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 8.4A Tc 8.4A 35W 9ns
N-CH/LL/100V/8.4A/0.2OHM@VGS=5V/Substitute of IRLR120TM
MOSFETs 100V N-Channel a-FET Logic Level
Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, 100V, 8.4A; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.4A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.22ohm; Rds(on) Test Voltage Vgs: 5V; Threshold Voltage Vgs: 2V; Power Dissipation
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-252
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)8.4 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance220 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance440 pF
Max Operating Temperature175 °C
Max Power Dissipation42 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max220 mΩ
Rise Time10 ns
Threshold Voltage2 V
Turn-Off Delay Time19 ns