供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-10-20
Lifecycle StatusObsolete (Last Updated: 4 months ago)
相关零件
InfineonSPD03N50C3ATMA1
Trans MOSFET N-CH 500V 3.2A 3-Pin(2+Tab) DPAK T/R / Cool MOS Power Transistor
InfineonIPD60R1K4C6ATMA1
28.4W(Tc) 20V 3.5V@ 90¦ÌA 9.4nC@ 10 V 1N 600V 1.4¦¸@ 1.1A,10V 3.2A 200pF@100V TO-252 2.56mm
描述
由其分销商提供的 Infineon SPD03N60S5BTMA1 的描述。
Trans MOSFET N-CH 600V 3.2A 3-Pin(2+Tab) DPAK T/R
Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
SPD03N60 600V COOLMOS N-CHANNEL POWER M;
Summary of Features: Innovative high voltage technology; Worldwide best R DS(on) in TO-251 and TO-252; Ultra low gate charge; Periodic avalanche rated; Extreme dv/dt rated; Ultra low effective capacitances; Improved transconductance
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)3.2 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)600 V
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance420 pF
Max Dual Supply Voltage600 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation38 W
Rds On Max1.4 Ω
Rise Time25 ns
Turn-Off Delay Time40 ns
Turn-On Delay Time35 ns
Dimensions
Height2.49 mm