STMicroelectronics STD3NK90ZT4

Name: STMicroelectronics STD3NK90ZT4
Brand: STMicroelectronics
SKU: STD3NK90ZT4

N-channel 900 V, 4.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) Power MOSFET in DPAK package

$ 0.93

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Distributor		SKU		Min	Pkg
Avnet		STD3NK90ZT4	37,500	2500						0.773	11h
Newark	2	STD3NK90ZT4	1,091	1	Cut Tape	2.220	1.790	1.160	0.762	0.762
Arrow Electronics	2	STD3NK90ZT4	60,000	2500						0.454
Verical	2	STD3NK90ZT4	60,000	2500						0.453
Future Electronics	2	STD3NK90ZT4	20,000	2500	Tape & Reel					0.900

数据表和文档

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STMicroelectronics

Datasheet20 页14 年前

Nu Horizons

Newark

element14 APAC

库存历史记录

3 个月趋势:

-8.40%

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供应链

Lifecycle StatusProduction (Last Updated: 1 month ago)

描述

由其分销商提供的 STMicroelectronics STD3NK90ZT4 的描述。

N-channel 900 V, 4.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) Power MOSFET in DPAK package

STMicroelectronics

Power MOSFET, N Channel, 900 V, 1.5 A, 4.1 ohm, TO-252 (DPAK), Surface Mount

Avnet

STD3NK90ZT4 N-CHANNEL MOSFET TRANSISTOR, 3 A, 900 V, 3-PIN DPAK

RS (Formerly Allied Electronics)

MOSFET N-CH 900V 3A DPAK / Trans MOSFET N-CH 900V 3A 3-Pin(2+Tab) DPAK T/R

Win Source

N-CHANNEL 900V-4.1 OHM-3A DPAK ZENER-PROTECTED SUPERMESH POWER MOSFET Power Field-Effect Transistor, 3A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

ComSIT Distribution GmbH

MOSFET, N CH, 900V, 3A, DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 4.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 90W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 3A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 900V; Voltage Vgs Max: 30V; Voltage Vgs Rds on Measurement: 10V

Farnell

Mosfet, N Channel, 900V, 3A, Dpak; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:1.5A; Tensión Drenaje-Fuente Vds:900V; Resistencia De Activación Rds(On):4.1Ohm; Tensión Vgs De Medición Rds(On):10V |Stmicroelectronics STD3NK90ZT4

Newark