供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-05-17
Lifecycle StatusProduction (Last Updated: 3 months ago)
相关零件
STMicroelectronicsSTD3NK90ZT4
N-channel 900 V, 4.1 Ohm typ., 3 A Zener-protected SuperMESH(TM) Power MOSFET in DPAK package
STMicroelectronicsSTD3NK80ZT4
N-CHANNEL 800V - 3.8 Ohm - 2.5A DPAK Zener-Protected SuperMESH™ Power MOSFET
STMicroelectronicsSTD4NK100Z
Power MOSFET, N Channel, 1 kV, 2.2 A, 6.8 Ohm, TO-252 (DPAK), 3 Pins, Surface Mount
描述
由其分销商提供的 STMicroelectronics STD3NK100Z 的描述。
N-channel 1000 V, 5.4 Ohm, 2.5 A, DPAK Zener-protected SuperMESH(TM) Power MOSFET
STD3NK100Z N-channel MOSFET Transistor, 2.5 A, 1000 V, 3-Pin DPAK
Power MOSFET, N Channel, 1 kV, 2.5 A, 5.4 ohm, TO-252 (DPAK), Surface Mount
Power MOSFET Transistors Hi Vltg NPN Pwr Transistor
90W(Tc) 30V 4.5V@ 50µA 18nC@ 10 V 1individualNChannel 1KV 6Ω@ 1.25A,10V 2.5A 601pF@25V DPAK，TO-252-3 SMD mount 2.63mm(height)
MOSFET, N CH, 1000V, 2.5A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):5.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:90W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (18-Jun-2012); Operating Temperature Range:-55°C to +150°C
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)2.5 A
Drain to Source Breakdown Voltage1 kV
Drain to Source Resistance6 Ω
Drain to Source Voltage (Vdss)1 kV
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance601 pF
Max Operating Temperature150 °C
Max Power Dissipation90 W
Min Breakdown Voltage1 kV
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation90 W
Rds On Max6 Ω
Resistance6 Ω
Rise Time7.5 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time39 ns
Turn-On Delay Time15 ns
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm