价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | STD2NK100Z | 35,000 | 2500 | |||||||||
| Verical | STD2NK100Z | 35,000 | 2500 | |||||||||
| TME | STD2NK100Z | 374 | 1 | 6h | ||||||||
| Newark | STD2NK100Z | 0 | 1 | Cut Tape | ||||||||
| Avnet | STD2NK100Z | 0 | 2500 | 10h |
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-05-17
Lifecycle StatusProduction (Last Updated: 1 month ago)
相关零件
STMicroelectronicsSTD2NK90ZT4
N-CHANNEL 900V - 5.5 Ohm - 2.1A - TO-220 ZENER-PROTECTED SUPERMESH MOSFET
STMicroelectronicsSTD3NK100Z
N-channel 1000 V, 5.4 Ohm, 2.5 A, DPAK Zener-protected SuperMESH(TM) Power MOSFET
STMicroelectronicsSTD3NK80ZT4
N-CHANNEL 800V - 3.8 Ohm - 2.5A DPAK Zener-Protected SuperMESH™ Power MOSFET
描述
由其分销商提供的 STMicroelectronics STD2NK100Z 的描述。
N-channel 1000 V, 6.25 Ohm typ., 1.85 A, Zener-protected SuperMESH Power MOSFET in DPAK package
STD2NK100Z N-channel MOSFET Transistor, 1.85 A, 1000 V, 3-Pin TO-252
Power MOSFET, N Channel, 1 kV, 1.85 A, 8.5 ohm, TO-252 (DPAK), Surface Mount
Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, N-CH, 1KV, 1.85A, TO-252; Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:1.85A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)1.85 A
Drain to Source Breakdown Voltage1 kV
Drain to Source Resistance8.5 Ω
Drain to Source Voltage (Vdss)1 kV
Element ConfigurationSingle
Gate to Source Voltage (Vgs)30 V
Input Capacitance499 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage1 kV
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation70 W
Rds On Max8.5 Ω
Resistance8.5 Ω
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time41.5 ns
Turn-On Delay Time7.2 ns
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm