备用零件
Price @ 1000
$ 1.32
$ 1.315
Stock
70,315
366,939
Authorized Distributors
1
3
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
-
30 V
Continuous Drain Current (ID)
80 A
80 A
Threshold Voltage
-
-
Rds On Max
-
4 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
300 W
300 W
Input Capacitance
5.5 nF
5.5 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 3 months ago)
描述
由其分销商提供的 STMicroelectronics STB80NF03L-04 的描述。
80A, 30V, 0.0055ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3
Power MOSFET Transistors N-Ch 30 Volt 80 Amp
N-CHANNEL 30V - 0.0035 ohm - 80A TO-262/TO-263 STripFET POWER MOSFET
MOSFET N-CHANNEL 30V 80A D2PAK
Power Field-Effect Transistor, 80A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5.5 mΩ
Element ConfigurationSingle
Fall Time95 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.5 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage30 V
Min Operating Temperature-60 °C
Number of Elements1
Power Dissipation300 W
Rise Time270 ns
Turn-Off Delay Time110 ns
Turn-On Delay Time30 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm