备用零件
Price @ 1000
$ 0.7
Stock
44,770
612,633
Authorized Distributors
0
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vds)
-
-
Continuous Drain Current (ID)
55 A
55 A
Threshold Voltage
-
1.7 V
Rds On Max
-
40 mΩ
Gate to Source Voltage (Vgs)
16 V
16 V
Power Dissipation
-
95 W
Input Capacitance
1.7 nF
510 pF
描述
由其分销商提供的 STMicroelectronics STB55NF06L 的描述。
N-channel 60 V, 0.014 Ohm typ., 35 A StripFET II Power MOSFET in a D2PAK package
N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET™II POWER MOSFET
Power Field-Effect Transistor, 55A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
STB55NF06L ST
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)55 A
Drain to Source Resistance20 mΩ
Element ConfigurationSingle
Gate to Source Voltage (Vgs)16 V
Input Capacitance1.7 nF
Max Operating Temperature175 °C
Max Power Dissipation95 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Turn-Off Delay Time40 ns
Turn-On Delay Time20 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm