STMicroelectronics STB3N62K3

Mosfet Transistor, N Channel, 2.7 A, 620 V, 2.2 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
Obsolete
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价格与库存

数据表和文档

下载 STMicroelectronics STB3N62K3 的数据表和制造商文档。

IHS

Datasheet19 页7 年前

element14 APAC

Newark

Future Electronics

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供应链

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-07-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-01-29
LTD Date2014-07-29

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描述

由其分销商提供的 STMicroelectronics STB3N62K3 的描述。

Mosfet Transistor, N Channel, 2.7 A, 620 V, 2.2 Ohm, 10 V, 3.75 V Rohs Compliant: Yes
Newark
N-channel 620 V, 2.2 Ohm typ., 2.7 A SuperMESH3(TM) Power MOSFET in D2PAK package
STMicroelectronics
Trans MOSFET N-CH 620V 2.7A 3-Pin(2+Tab) D2PAK T/R
Avnet
Power Field-Effect Transistor, 2.7A I(D), 620V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
IHS
MOSFET, N CH, 620V, 2.7A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:2.7A; Drain Source Voltage Vds:620V; On Resistance Rds(on):2.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:45W; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
element14 APAC

图片

Newark
Farnell
LZChips
Lanka Micro

制造商别名

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  • SGS-Thomson Microelectronics
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