价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Verical | STB33N60M2 | 3,000 | 1K | |||||||||
| Arrow Electronics | STB33N60M2 | 3,000 | 1K | |||||||||
| Rochester Electronics | STB33N60M2 | 16,202 | 1d | |||||||||
| DigiKey | 497-14973-1-ND | 1,060 | 1 | Cut Tape | ||||||||
| Newark | STB33N60M2 | 0 | 1 | Cut Tape |
相关零件
VishaySIHB33N60E-GE3
Power MOSFET, N Channel, 600 V, 33 A, 0.099 ohm, TO-263 (D2PAK), Surface Mount
STMicroelectronicsSTB28N60M2
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in D2PAK package
VishaySIHB28N60EF-GE3
MOSFET N-CH 600V 28A D2PAK / N-Channel 600 V 28A (Tc) 250W (Tc) Surface Mount D2PAK
STMicroelectronicsSTB35N60DM2
N-channel 600 V, 0.094 Ohm typ., 28 A MDmesh DM2 Power MOSFETs in D2PAK package
STMicroelectronicsSTB37N60DM2AG
Power MOSFET, N Channel, 600 V, 28 A, 0.094 ohm, TO-263 (D2PAK), Surface Mount
描述
由其分销商提供的 STMicroelectronics STB33N60M2 的描述。
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in D2PAK package
N-Channel 600 V 26 A 0.125 Ohm Surface Mount MDmesh II Plus Mosfet - D2PAK
Mosfet, N-Ch, 600V, 26A, To-263 Rohs Compliant: Yes |Stmicroelectronics STB33N60M2
Power Field-Effect Transistor, 26A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)26 A
Drain to Source Resistance125 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time9 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.781 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation190 W
Rds On Max125 mΩ
Rise Time9.6 ns
Schedule B8541290080
Turn-Off Delay Time109 ns
Turn-On Delay Time16 ns