STMicroelectronics STB32NM50N

Name: STMicroelectronics STB32NM50N
Brand: STMicroelectronics
SKU: STB32NM50N

N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in D2PAK package

$ 1.894

EOL

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Distributor		SKU		Min	Pkg
Verical		STB32NM50N	3,000	1K					1.844	1.549
Arrow Electronics		STB32NM50N	3,000	1K					1.846	1.675
TME	2	STB32NM50N	0	1		4.990	3.320	2.360	1.910	1.910	11h
Newark		STB32NM50N	0	1	Cut Tape	5.770	4.070	3.100	2.830	2.830
Future Electronics		STB32NM50N	0	1	Cut Tape	2.750	2.660	2.610	2.500	2.500

数据表和文档

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IHS

Datasheet21 页14 年前

Newark

库存历史记录

3 个月趋势:

-55.78%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2012-08-01

Lifecycle StatusEOL (Last Updated: 1 month ago)

LTB Date2026-09-10

LTD Date2027-03-10

描述

由其分销商提供的 STMicroelectronics STB32NM50N 的描述。

N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in D2PAK package

STMicroelectronics

STB32NM50N N-channel MOSFET Transistor, 22 A, 500 V, 3-Pin D2PAK

RS (Formerly Allied Electronics)

Power MOSFET, N Channel, 500 V, 22 A, 0.1 ohm, TO-263 (D2PAK), Surface Mount

Avnet

N-Channel 500 V 130 mOhm SMT MDmesh II Power Mosfet - D2PAK

Future Electronics

Trans MOSFET N-CH 500V 22A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 22A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N-CH, 500V, 22A, 190W, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 190W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh II Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

Farnell