STMicroelectronics STB16N65M5

Name: STMicroelectronics STB16N65M5
Brand: STMicroelectronics
SKU: STB16N65M5

N-channel 650 V, 0.230 Ohm typ., 12 A MDmesh M5 Power MOSFET in D2PAK package

Obsolete

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价格与库存

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Distributor	SKU		Min	Pkg
Farnell	STB16N65M5	0	1		4.698*	3.377*	3.078*	1.988*	1.988*	1d
Win Source	WS-STB16N65M5	20	45				1.342	0.895	0.895	2h
Worldway Electronics	STB16N65M5	13,805	7	Tape & Reel		1.366	1.324	1.254	1.254	1h
Aztech	STB16N65M5	9,680			2.960	2.960	2.960	2.960	2.960	22h
SHENGYU ELECTRONICS	STB16N65M5	14,456	1		0.637	0.624	0.610	0.590	0.560	2d

数据表和文档

下载 STMicroelectronics STB16N65M5 的数据表和制造商文档。

IHS

Datasheet19 页20 年前

Farnell

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2009-02-18

Lifecycle StatusObsolete (Last Updated: 1 month ago)

描述

由其分销商提供的 STMicroelectronics STB16N65M5 的描述。

N-channel 650 V, 0.230 Ohm typ., 12 A MDmesh M5 Power MOSFET in D2PAK package

STMicroelectronics

STB16N65M5 N-channel MOSFET Transistor, 12 A, 650 V, 3-Pin TO-263

RS (Formerly Allied Electronics)

Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

IHS

MOSFET, N CH, 650V, 12A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.23ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:90W; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

element14 APAC