供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
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Power MOSFET, N Channel, 500 V, 11 A, 0.52 ohm, TO-263 (D2PAK), Surface Mount
描述
由其分销商提供的 STMicroelectronics STB12NM50T4 的描述。
N-Channel 500V - 0.30 Ohm - 12A - D2PAK MDmesh(TM) POWER MOSFET
Power MOSFET, N Channel, 550 V, 12 A, 0.3 ohm, TO-263 (D2PAK), Surface Mount
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 12A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N-CH, 550V, 12A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 160W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -65°C
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)12 A
Current Rating12 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance350 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)30 V
Input Capacitance1 nF
Max Operating Temperature150 °C
Max Power Dissipation160 W
Min Breakdown Voltage500 V
Min Operating Temperature-65 °C
Nominal Vgs4 V
Number of Elements1
PackagingTape and Reel
Power Dissipation160 W
Rds On Max350 mΩ
Resistance350 mΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-On Delay Time20 ns
Voltage Rating (DC)550 V