STMicroelectronics STB12NM50T4

Name: STMicroelectronics STB12NM50T4
Brand: STMicroelectronics
SKU: STB12NM50T4

N-Channel 500V - 0.30 Ohm - 12A - D2PAK MDmesh(TM) POWER MOSFET

$ 2.087

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Distributor		SKU		Min	Pkg
Avnet		STB12NM50T4	5,000	1K					2.064	1.976	3h
Newark	2	STB12NM50T4	179	1	Cut Tape	5.940	4.130	3.110	2.880	2.880
Verical		STB12NM50T4	2,000	1K					2.054	1.960
Arrow Electronics		STB12NM50T4	2,000	1K					2.056	1.963
TME	4	STB12NM50T4-STM-0	2,000	1K					2.095*	2.095*	14h

数据表和文档

下载 STMicroelectronics STB12NM50T4 的数据表和制造商文档。

STMicroelectronics

Datasheet17 页20 年前

Future Electronics

Newark

DigiKey

库存历史记录

3 个月趋势:

+52.64%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1980-01-04

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STB12NM50T4 的描述。

N-Channel 500V - 0.30 Ohm - 12A - D2PAK MDmesh(TM) POWER MOSFET

STMicroelectronics

Power MOSFET, N Channel, 550 V, 12 A, 0.3 ohm, TO-263 (D2PAK), Surface Mount

Avnet

Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK T/R

Verical

Power Field-Effect Transistor, 12A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Semicontronic

MOSFET, N-CH, 550V, 12A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 550V; On Resistance Rds(on): 0.3ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 160W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -65°C

Farnell