供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-02-07
Lifecycle StatusProduction (Last Updated: 1 month ago)
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描述
由其分销商提供的 STMicroelectronics STB160N75F3 的描述。
N-channel 75 V, 3.2 mOhm typ., 120 A STripFET(TM) Power MOSFET in D2PAK package
Mosfet Transistor, N Channel, 60 A, 75 V, 3.5 Mohm, 10 V, 4 V |Stmicroelectronics STB160N75F3
STB160N75F3 N-CHANNEL MOSFET TRANSISTOR, 120 A, 75 V, 3-PIN D2PAK
Power MOSFET, N Channel, 75 V, 60 A, 0.0035 ohm, TO-263 (D2PAK), Surface Mount
Trans MOSFET N-CH 75V 120A 3-Pin(2+Tab) D2PAK T/R
STMicroelectronics NChannel EnhancedMOSTube STripFETseries, Vds=75 V, 120 A, D2PAK (TO-263)encapsulation, surface mount, 3Pin
MOSFET, N CH, 75V, 120A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:75V; On Resistance Rds(on):3.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:120A; Package / Case:D2-PAK; Power Dissipation Pd:330W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance4.2 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.75 nF
Max Operating Temperature175 °C
Max Power Dissipation330 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
PackagingTape and Reel
Power Dissipation330 W
Rds On Max3.7 mΩ
Resistance3.7 MΩ
Rise Time65 ns
TerminationSMD/SMT
Turn-Off Delay Time100 ns
Turn-On Delay Time22 ns
Dimensions
Height4.6 mm
Length10.75 mm
Width10.4 mm