STMicroelectronics STB11NM80T4

Name: STMicroelectronics STB11NM80T4
Brand: STMicroelectronics
SKU: STB11NM80T4

N-channel 800 V, 0.35 Ohm, 11 A MDmesh(TM) Power MOSFET in D2PAK

$ 4.01

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Distributor		SKU		Min	Pkg
Avnet		STB11NM80T4	9,000	1K		3.292	3.152	4h
Future Electronics		STB11NM80T4	1,000	1K	Tape & Reel	4.670	4.670
Newark		STB11NM80T4	9,000	1K	Tape & Reel	4.780	4.780
Arrow Electronics	2	STB11NM80T4	3,000	1K		2.402	2.402
Verical	2	STB11NM80T4	3,000	1K		2.425	2.425

数据表和文档

下载 STMicroelectronics STB11NM80T4 的数据表和制造商文档。

IHS

Datasheet22 页20 年前

Farnell

iiiC

Arrow Electronics

DigiKey

库存历史记录

3 个月趋势:

-16.47%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1980-01-04

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics STB11NM80T4 的描述。

N-channel 800 V, 0.35 Ohm, 11 A MDmesh(TM) Power MOSFET in D2PAK

STMicroelectronics

Power MOSFET, N Channel, 800 V, 5.5 A, 0.35 ohm, TO-263 (D2PAK), Surface Mount

Avnet

Power Mosfet, N Channel, 5.5 A, 800 V, 0.35 Ohm, 4 V, 4 V |Stmicroelectronics STB11NM80T4

Newark

Trans MOSFET N-CH 800V 11A 3-Pin(2+Tab) D2PAK T/R

Verical

MOSFET, N CH, 800V, 11A, D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.5A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 4V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 150W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 44A; Operating Temperature Min: -65°C; Operating Temperature Range: -65°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Power MOSFET; Voltage Vds Typ: 800V; Voltage Vgs Max: 4V; Voltage Vgs Rds on Measurement: 10V

Farnell