供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-02-24
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2016-02-04
LTD Date2016-08-04
相关零件
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描述
由其分销商提供的 STMicroelectronics STB11N65M5 的描述。
N-channel 650 V, 0.43 Ohm typ., 9 A MDmesh M5 Power MOSFET in D2PAK package
STB11N65M5 N-CHANNEL MOSFET TRANSISTOR, 9 A, 710 V, 3-PIN D2PAK
N-Channel 710 V 0.48 O 85 W 17 nC Surface Mount Mdesh V Power MosFet - D2PAK
85W(Tc) 25V 5V@ 250¦ÌA 17nC@ 10 V 1N 650V 480m¦¸@ 4.5A,10V 9A 644pF@100V D2PAK,TO-263
Trans MOSFET N-CH 650V 9A 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 9A I(D), 650V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)9 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance480 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)25 V
Input Capacitance644 pF
Max Operating Temperature150 °C
Max Power Dissipation85 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape and Reel
Power Dissipation85 W
Rds On Max480 mΩ
Turn-Off Delay Time23 ns
Turn-On Delay Time23 ns
Dimensions
Height4.6 mm
Length10.4 mm
Width9.35 mm