价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | STB12NM50ND | 10 | 1 | Cut Tape | ||||||||
| Microchip USA | STB12NM50ND | 378 | 600 | Tray | 10m | |||||||
| Win Source | WS-STB12NM50ND | 13,977 | 15 | 7h | ||||||||
| Worldway Electronics | STB12NM50ND | 12,760 | 7 | Tape & Reel | 6h | |||||||
| Aztech | STB12NM50ND | 9,760 | 3h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-09-25
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-04-25
LTD Date2019-10-25
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描述
由其分销商提供的 STMicroelectronics STB12NM50ND 的描述。
N-channel 500 V, 0.29 Ohm typ., 11 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
Trans MOSFET N-CH 500V 11A 3-Pin(2+Tab) D2PAK T/R
N-Channel 550 V 0.38 Ohm Surface Mount FDmesh II Power MosFet - D2PAK
Power Field-Effect Transistor, 11A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)500 V
Fall Time17 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance850 pF
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation100 W
Rds On Max380 mΩ
Resistance290 mΩ
Rise Time15 ns
Schedule B8541290080
Turn-Off Delay Time40 ns
Turn-On Delay Time12 ns