供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2018-10-21
LTD Date2019-04-21
相关零件
onsemiISL9N303AS3
Discrete Commercial N-Channel PowerTrench MOSFET, 30V, 75A, 0.0032 Ohms @ VGS = 10V, TO-262/I2PAK Package
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描述
由其分销商提供的 STMicroelectronics STB100NF03L-03-1 的描述。
N-channel 30 V, 0.0026 Ohm typ., 100 A StripFET(TM) II Power MOSFET in a D2PAK package
N-channel 30V - 0.0026ohm - 100A - D2PAK/I2/TO-220 STripFET TM III Power MOSFET
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Power Field-Effect Transistor, 100A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-262-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)100 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance4.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time95 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance6.2 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation300 W
Rds On Max3.2 mΩ
Rise Time315 ns
Turn-Off Delay Time115 ns
Turn-On Delay Time35 ns