供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 5 months ago)
描述
由其分销商提供的 STMicroelectronics SD2931-10W 的描述。
N-Channel 125 V 389 W HF/VHF/UHF MOS Field-Effect RF Power Transistor-M174
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
TDK - CGA2B3X7S2A102K050BB - Keramikvielschichtkondensator, SMD, 1000 pF, 100 V, 0402 [Metrisch 1005], ± 10%, X7S, Baureihe CGA
MOSFET, RF, 150W, 125V, 20A, M174; Drain Source Voltage Vds: 125V; Continuous Drain Current Id: 20A; Power Dissipation Pd: 389W; Operating Frequency Min: -; Operating Frequency Max: 230MHz; RF Transistor Case: M174; No. of Pin
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageM
MountScrew
Number of Pins4
Number of Terminals4
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage125 V
Drain to Source Voltage (Vdss)125 V
Element ConfigurationSingle
Frequency175 MHz
Gain14 dB
Gate to Source Voltage (Vgs)20 V
Max Frequency230 MHz
Max Operating Temperature200 °C
Max Power Dissipation389 W
Min Breakdown Voltage125 V
Min Operating Temperature-65 °C
Number of Elements1
Operating Supply Voltage50 V
Output Power150 W
Power Dissipation389 W
Power Gain15 dB
Schedule B8541290080
Test Current250 mA
Test Voltage50 V
Voltage Rating125 V