供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
描述
由其分销商提供的 STMicroelectronics SD57030 的描述。
30W 28V HF to 1GHz LDMOS TRANSISTOR
Transistor RF FET N-CH 65V 4A 945MHz 3-Pin Case M-243
Single N-Channel 65 V 74 W Silicon Mosfet - M-243
RF & Microwave Transistors N-Ch 65 Volt 4 Amp
RF power transistor, the LdmoST family
STMicroelectronics SCT
UHF BAND Si N-CHANNEL RF POWER MOSFET
74W 20V 1N 65V 4A 58pF@ 28V M-243-3 20.57mm*6.1mm*4.45mm
RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET
Rf Power |Stmicroelectronics SD57030
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageM
MountScrew
Number of Pins243
Number of Terminals2
Technical
Continuous Drain Current (ID)4 A
Current Rating4 A
Drain to Source Breakdown Voltage65 V
Drain to Source Voltage (Vdss)65 V
Element ConfigurationSingle
Frequency945 MHz
Gain13 dB
Gate to Source Voltage (Vgs)20 V
Input Capacitance58 pF
Max Frequency1 GHz
Max Operating Temperature200 °C
Max Output Power30 W
Max Power Dissipation74 W
Min Breakdown Voltage65 V
Min Operating Temperature-65 °C
Number of Elements1
Operating Supply Voltage28 V
Output Power30 W
Power Dissipation74 W
Power Gain15 dB
Test Current50 mA
Test Voltage28 V
Voltage Rating65 V
Voltage Rating (DC)65 V