STMicroelectronics SCT10N120

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
$ 6.709
Obsolete
制造商页面数据表

价格与库存

查看所有价格优惠
DistributorSKUMinPkg
NewarkSCT10N1202091
VericalSCT10N1201010
TME
2
SCT10N120561
17h
AvnetSCT10N1200600
5d
Future ElectronicsSCT10N120030Tube

数据表和文档

下载 STMicroelectronics SCT10N120 的数据表和制造商文档。

Future Electronics

Datasheet14 页9 年前

库存历史记录

3 个月趋势:
-16.98%
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供应链

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-05-25
Lifecycle StatusObsolete (Last Updated: 2 months ago)

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描述

由其分销商提供的 STMicroelectronics SCT10N120 的描述。

Silicon carbide Power MOSFET 1200 V, 12 A, 520 mOhm (typ., TJ = 150 C) in an HiP247 package
STMicroelectronics
N-Channel 1200 V 520 mO 22 nC Silicon Carbide power Mosfet - HiP247
Future Electronics
Trans MOSFET N-CH SiC 1.2KV 12A 3-Pin(3+Tab) HIP-247 Tube
Verical
Silicon Carbide MOSFET, Single, N Channel, 12 A, 1.2 kV, 0.5 ohm, HiP247
Avnet
Power Field-Effect Transistor, 12A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
IHS
SIC MOSFET, N-CH, 1.2KV, 12A, HIP247-3; MOSFET Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:1.2kV; No. of Pins:3Pins; Rds(on) Test Voltage:20V; Power Dissipation:150W RoHS Compliant: Yes
Newark

图片

Farnell
RS
Lanka Micro
Future Electronics

制造商别名

STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics