STMicroelectronics SCT20N120

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
$ 7.02
Obsolete
制造商页面数据表

价格与库存

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DistributorSKUMinPkg
Future Electronics
2
SCT20N1201724Tube
NewarkSCT20N1204141
Verical
2
SCT20N12041
Arrow ElectronicsSCT20N1202971
AvnetSCT20N1200600
5d

数据表和文档

下载 STMicroelectronics SCT20N120 的数据表和制造商文档。

Farnell

Datasheet13 页13 年前

Future Electronics

库存历史记录

3 个月趋势:
-35.48%
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供应链

Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-11-07
Lifecycle StatusObsolete (Last Updated: 2 months ago)
LTB Date2026-02-15
LTD Date2026-08-15

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描述

由其分销商提供的 STMicroelectronics SCT20N120 的描述。

Silicon carbide Power MOSFET 1200 V, 20 A, 189 mOhm (typ., Tj = 150 C) in an HiP247 package
STMicroelectronics
Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Semicontronic
MOSFET, N-CH, 1.2KV, 20A, HIP247; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(on): 0.169ohm; Rds(on) Test Voltage Vgs: 20V; Threshold Voltage Vgs: 3.5V;
Farnell
Mosfet, N-Ch, 1.2Kv, 20A, Hip247; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:3Pins; Rds(On) Test Voltage:20V; Power Dissipation:175W; Msl:-Rohs Compliant: Yes |Stmicroelectronics SCT20N120
Newark

图片

Farnell
TME
Lanka Micro
Future Electronics
UTSource

制造商别名

STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：

  • ST MICRO
  • STM
  • SGS
  • SGS THOMSON
  • INMOS
  • STMICROE
  • STMICROEL
  • STMICR
  • ST MIC
  • ST MICROELECTRONIC
  • SGS THOMPSON
  • SESCOSEM
  • STMICROELECT
  • ST8
  • STMICROELECTRON
  • WAFERSCALE
  • SGS-ATES
  • ST MICROELECTRONICS SEMI
  • ST/SGS
  • ST MICROELECTRO
  • SGST
  • THOMS
  • STMICROELE
  • WAFERSCALE INTEGRATION INC
  • SGS-Thomson Microelectronics
  • ST Microeletronics