备用零件
Price @ 1000
$ 0.3
$ 0.356
$ 0.356
Stock
2,134,049
7,408,253
7,408,253
Authorized Distributors
6
6
6
Mount
Surface Mount
-
-
Case/Package
DPAK
DPAK
DPAK
Polarity
NPN
NPN
NPN
Collector Emitter Breakdown Voltage
80 V
80 V
80 V
Max Collector Current
8 A
8 A
8 A
Transition Frequency
-
85 MHz
85 MHz
Collector Emitter Saturation Voltage
-
1 V
1 V
hFE Min
40
40
40
Power Dissipation
20 W
1.75 W
1.75 W
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描述
由其分销商提供的 STMicroelectronics MJD44H11T4-A 的描述。
Trans GP BJT NPN 80V 8A 20000mW Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252AA, Plastic/Epoxy, 2 Pin
Trans, Aec-Q101, Npn, 80V, 8A, 20W Rohs Compliant: Yes |Stmicroelectronics MJD44H11T4-A
MJD44H11T4 Series 80 V 8 A SMT Complementary Power Transistor - TO-252-3
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage80 V
Collector Emitter Voltage (VCEO)80 V
Emitter Base Voltage (VEBO)5 V
hFE Min40
Max Breakdown Voltage80 V
Max Collector Current8 A
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
PolarityNPN
Power Dissipation20 W
Schedule B8541290080