STMicroelectronics MJD44H11T4

Name: STMicroelectronics MJD44H11T4
Brand: STMicroelectronics
SKU: MJD44H11T4

Bipolar (BJT) Single Transistor, NPN, 80 V, 8 A, 20 W, TO-252 (DPAK), Surface Mount

$ 0.358

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	MJD44H11T4	107,500	2500						0.200	3h
Future Electronics	3	MJD44H11T4	2,500	2500	Tape & Reel					0.193
Newark	2	MJD44H11T4	5	1	Cut Tape	1.160	0.754	0.521	0.388	0.388
Arrow Electronics	2	MJD44H11T4	380,000	2500						0.202
Verical		MJD44H11T4	380,000	2500						0.202

数据表和文档

下载 STMicroelectronics MJD44H11T4 的数据表和制造商文档。

Components Direct

Datasheet11 页14 年前

Farnell

Factory Futures

Newark

TME

库存历史记录

3 个月趋势:

+5.47%

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STMicroelectronicsMJD44H11T4

onsemiMJD44H11T4G

Price @ 1000

$ 0.358

$ 0.356

Stock

2,925,088

8,513,442

Authorized Distributors

Mount

Surface Mount

Case/Package

DPAK

Polarity

NPN

Collector Emitter Breakdown Voltage

80 V

Max Collector Current

8 A

Transition Frequency

50 MHz

85 MHz

Collector Emitter Saturation Voltage

1 V

hFE Min

Power Dissipation

20 W

1.75 W

供应链

Lifecycle StatusProduction (Last Updated: 5 months ago)

描述

由其分销商提供的 STMicroelectronics MJD44H11T4 的描述。

Bipolar (BJT) Single Transistor, NPN, 80 V, 8 A, 20 W, TO-252 (DPAK), Surface Mount

EBV Elektronik

Bipolar (Bjt) Single Transistor, Npn, 80 V, 20 W, 8 A, 60 Rohs Compliant: Yes

Augswan

Low voltage complementary power transistor Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-252, Plastic/Epoxy, 2 Pin

ComSIT Distribution GmbH

Bipolar Transistors (BJT); MJD44H11T4; STMICROELECTRONICS; NPN; 3; 80 V; 8 A

Maritex

TRANSISTOR, BIPOLAR, SI, PNP, AMPLIFIER, SWITCH, VCEO -80V, IC -8A, PD 20W, TO-252

RS (Formerly Allied Electronics)

MJD44H11 Series NPN/PNP 80 V 8 A Complementary Silicon Transistor - TO-252-3

Future Electronics

80V 20W 40@4A,1V 8A NPN TO-252 Bipolar Transistors - BJT ROHS

Dasenic

Trans GP BJT NPN 80V 8A 20000mW 3-Pin(2+Tab) DPAK T/R

Verical

TRANSISTOR NPN 80V 8A DPAK; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:-; Power Dissipation Pd:20W; DC Collector Current:8A; DC Current Gain hFE:60hFE; Transistor Case Style:

element14 APAC

Transistor Polarity = NPN / Configuration = Complementary / Continuous Collector Current (Ic) A = 8 / Collector-Emitter Voltage (Vceo) V = 80 / DC Current Gain (hFE) = 40 / Collector-Base Voltage (Vcbo) V = 5 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 20 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel

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