STMicroelectronics MJD32CT4

Name: STMicroelectronics MJD32CT4
Brand: STMicroelectronics
SKU: MJD32CT4

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

$ 0.257

Production

制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Future Electronics	2	MJD32CT4	7,500	2500	Tape & Reel					0.131
Avnet		MJD32CT4	5,000	2500						0.161	5d
Newark		MJD32CT4	3	5			0.673	0.451	0.311	0.311
Arrow Electronics	3	MJD32CT4	4,850	1		0.641	0.474	0.348	0.219	0.195
Verical	3	MJD32CT4	197,500	2500						0.106

数据表和文档

下载 STMicroelectronics MJD32CT4 的数据表和制造商文档。

IHS

Datasheet13 页14 年前

element14 APAC

Future Electronics

Newark

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

-7.69%

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STMicroelectronicsMJD32CT4

onsemiNJVMJD32CT4G

Price @ 1000

$ 0.257

$ 0.281

Stock

1,137,258

692,549

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-252

DPAK

Polarity

PNP

Collector Emitter Breakdown Voltage

100 V

Max Collector Current

3 A

Transition Frequency

3 MHz

Collector Emitter Saturation Voltage

1.2 V

hFE Min

Power Dissipation

15 W

供应链

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics MJD32CT4 的描述。

Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin

Augswan

Transistor, Bipolar, Si, PNP, Amplifier, Power, VCEO -100V, IC -3A, PD 15W, TO-252

RS (Formerly Allied Electronics)

Trans GP BJT PNP 100V 3A 15000mW 3-Pin(2+Tab) DPAK T/R / TRANS PNP 100V 3A DPAK

Win Source

100V 15W 3A 10@3A4V 1.2V@3A375mA PNP +150¡Í@(Tj) TO-252-3 Bipolar Transistors - BJT ROHS

Dasenic

100V 15W 25@3A,4V 3A PNP DPAK Bipolar (BJT) ROHS

EBEE

Bipolar Transistors - BJT PNP Gen Pur Switch

Component Sense

TRANSISTOR, BJT, PNP, -100V, -3A, TO-252; Transistor Polarity: PNP; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 15W; DC Collector Current: 3A; DC Current Gain hFE: 50hFE; Transis

Farnell

Transistor Polarity = PNP / Configuration = Single / Continuous Collector Current (Ic) A = -3 / Collector-Emitter Voltage (Vceo) V = -100 / DC Current Gain (hFE) = 10 / Collector-Base Voltage (Vcbo) V = -100 / Emitter-Base Voltage (Vebo) V = -5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Power Dissipation (Pd) W = 15 / Package Type = DPAK / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = -1.2

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