STMicroelectronics MJD31CT4

Name: STMicroelectronics MJD31CT4
Brand: STMicroelectronics
SKU: MJD31CT4

Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 15 W, TO-252 (DPAK), Surface Mount

$ 0.423

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Distributor		SKU		Min	Pkg
Future Electronics	3	MJD31CT4	37,500	2500	Tape & Reel	0.133
Avnet		MJD31CT4	7,500	2500		0.140	5d
Newark	2	MJD31CT4	7,500	2500	Tape & Reel	0.204
Verical	2	MJD31CT4	120,000	2500		0.124
Arrow Electronics	2	MJD31CT4	120,000	2500		0.124

数据表和文档

下载 STMicroelectronics MJD31CT4 的数据表和制造商文档。

Newark

Datasheet13 页14 年前

Factory Futures

Farnell

DigiKey

TME

库存历史记录

3 个月趋势:

-3.86%

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STMicroelectronicsMJD31CT4

onsemiNJVMJD31CT4G

Price @ 1000

$ 0.423

$ 0.349

Stock

2,837,401

9,846,289

Authorized Distributors

Mount

Surface Mount

Case/Package

TO-252

DPAK

Polarity

NPN

Collector Emitter Breakdown Voltage

100 V

Max Collector Current

3 A

Transition Frequency

3 MHz

Collector Emitter Saturation Voltage

1.2 V

hFE Min

Power Dissipation

15 W

1.56 W

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date1996-05-31

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 STMicroelectronics MJD31CT4 的描述。

Bipolar (BJT) Single Transistor, NPN, 100 V, 3 A, 15 W, TO-252 (DPAK), Surface Mount

EBV Elektronik

TRANSISTOR, BIPOLAR, SI, NPN, AMPLIFIER, POWER, VCEO 100V, IC 3A, PD 15W, TO-252,HFE 50

RS (Formerly Allied Electronics)

Bipolar Transistors (BJT); MJD31CT4; STMICROELECTRONICS; NPN; 3; 100 V; 3 A

Maritex

Trans GP BJT NPN 100V 3A 15000mW 3-Pin(2+Tab) DPAK T/R

Verical

LOW VOLTAGE NPN POWER TRANSISTOR Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-252, Plastic/Epoxy, 2 Pin

ComSIT Distribution GmbH

Power Bipolar, NPN, 4V, 375mA, DPAK, Tape and Reel

STMicroelectronics SCT

TRANSISTOR, NPN, SMD, TO-252; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 100V; Transition Frequency ft: -; Power Dissipation Pd: 15W; DC Collector Current: 3A; DC Current Gain hFE: 10hFE; Transistor Case Sty

Farnell

Transistor Polarity = NPN / Configuration = Single / Continuous Collector Current (Ic) A = 3 / Collector-Emitter Voltage (Vceo) V = 100 / DC Current Gain (hFE) = 50 / Collector-Base Voltage (Vcbo) V = 100 / Emitter-Base Voltage (Vebo) V = 5 / Operating Temperature Min. °C = -65 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / Packaging = Tape & Reel / Collector Emitter Saturation Voltage Max. (Vce(sat)) V = 1.2 / Base Emitter Saturation Voltage Max. (Vbe(sat)) V = 1.8

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