备用零件
Price @ 1000
$ 1.303
$ 1.303
Stock
140
186,832
186,832
Authorized Distributors
0
6
6
Mount
-
Surface Mount
Surface Mount
Case/Package
D2PAK
DPAK
DPAK
Drain to Source Voltage (Vdss)
200 V
200 V
200 V
Continuous Drain Current (ID)
18 A
18 A
18 A
Threshold Voltage
-
4 V
4 V
Rds On Max
-
180 mΩ
180 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
125 W
3.1 W
3.1 W
Input Capacitance
-
1.3 nF
1.3 nF
描述
由其分销商提供的 STMicroelectronics IRF640S 的描述。
18A, 200V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
MOSFET N-CH 200V 18A D2PAK
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFETs N-Ch 200 Volt 18 Amp
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageD2PAK
Number of Terminals2
Technical
Continuous Drain Current (ID)18 A
Current Rating18 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance180 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage200 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation125 W
Rise Time27 ns
Voltage Rating (DC)200 V